Both the gates of the transistor affect the level of current flowing between the source and the drain. These transistors are equivalent to two MOSFET transistors connected in series. In a Dual Gate MOSFET transistor, two gates are present instead of one in series along the length of the channel. These types of transistors are used as resistors, amplifiers, switches, etc. The JFET transistor is a type of transistor in which there is no p-junction but a narrow region of high resistivity semiconductor allows the majority of charge carriers to flow between the source and the drain. They are used mostly for amplifying weak signals. FETs use very little current due to their high impedance. In these transistors, the voltage at the gate controls the current flow from the source to the drain. They have three terminals which are named as gate, source and drain. They provide faster switching speeds.įield Effect Transistors (FET) are voltage-controlled semiconductor devices. Such transistors are used in digital or analog microwave applications with high frequency. Heterojunction Bipolar TransistorĪ heterojunction bipolar transistor (HBT) is a type of BJT in which the emitter and the base regions of the transistor are made from different semiconductor materials. Such transistors can be made either by connecting two transistors or are available as an integrated circuit chip. In such transistors, two discrete transistors are joined together. The Darlington Transistor was invented by Sidney Darlington. The use of the diode prevents the transistor from saturating by diverting the extreme input currents. Schottky TransistorĪ Schottky transistor is a junction transistor joined with a Schottky diode. It is used to switch between high currents in less than nanoseconds. Operations of the transistor in the avalanche breakdown region are called avalanche mode operations. The common housing options for these two types of transistors are plastic or metal. Avalanche TransistorĪvalanche Transistors are junction transistors in which the collector-current/collector-to-emitter voltage characteristics are beyond the collector-to-emitter breakdown voltage. Typically, there are two types of transistors: NPN and PNP. It was developed by Bell laboratories in 1954. The Diffusion Transistor is a type of transistor where the N-type silicon part called the substrate, has P-type or N-type gaseous impurities as dopants. If a low amount of current flows through the base, then a large amount of current would flow through the emitter to the collector.īJTs can be used in circuits as an amplifier, filter, rectifier, etc. BJTs are current-controlled semiconductor devices. The Bipolar Junction transistors are a type of transistors in which a PN junction exists and both the holes and electrons are required for conducting current. To explain the working of both NPN and PNP transistor starting with an example.Transistors are classified according to their structure and their uses: Bipolar Junction Transistor The transistor is the PN junctions placed back to back. Transistors are broadly divided into three types: bipolar transistors (bipolar junction transistors: BJTs), field-effect transistors (FETs), and insulated-gate bipolar transistors (IGBTs). The transistor is act as amplifier and also a switch, which can able to boost the input signals to high amplitude or it can turn on or off the circuit several times per second. The base junction is very thin and lightly doped in it. When the collector base junctions are in reverse bias then the circuits offer a high resistance. If the emitter-base in forward biased then it offering a low internal resistance to the transistor. The emitter base biasing determining the internal resistance of the transistor. The base junction is connected with two other junction of collector and emitter. (Other transistor types include the tetrode and the power transistor.). The large in size area of collector so it can able to collect most of the electrons supplied by the emitter.īase : The center junction of the transistor is known as the base. germanium, P-type material is formed, which produces the flow of. The collection section is moderately doped. The collector is like the receiver and emitter is the electron provider. Collector : This pin section will collecting the majority portion of the charge carrier or the electrons are mostly collected by the collector pin.
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